| Icandelo | 99.9999% | Iyunithi |
| Ioksijini (Ar) | ≤0.1 | i-ppmV |
| I-nitrogen | ≤0.1 | i-ppmV |
| I-hydrogen | ≤20 | i-ppmV |
| I-Helium | ≤10 | i-ppmV |
| CO+CO2 | ≤0.1 | i-ppmV |
| I-THC | ≤0.1 | i-ppmV |
| Iiklorosilane | ≤0.1 | i-ppmV |
| I-Disiloxane | ≤0.1 | i-ppmV |
| UDisilane | ≤0.1 | i-ppmV |
| Ukufuma (H2O) | ≤0.1 | i-ppmV |
ISilane yintlanganisela yesilicon kunye nehydrogen. Ligama eliqhelekileyo loluhlu lweekhompawundi, kuquka i-monosilane (SiH4), i-disilane (Si2H6) kunye nezinye iikhompawundi zesilicon-hydrogen ezikumgangatho ophezulu. Phakathi kwazo, i-monosilane yeyona ixhaphakileyo, ngamanye amaxesha ibizwa ngokuba yi-silane ngamafutshane. I-Silane yigesi engenambala enevumba elibi legalikhi. Inyibilika emanzini, phantse inganyibiliki kwi-ethanol, i-ether, i-benzene, i-chloroform, i-silicon chloroform kunye ne-silicon tetrachloride. Iipropati zeekhemikhali ze-silane zisebenza kakhulu kune-alkanes kwaye zinyibilikiswa lula. Ukutsha okuzenzekelayo kunokwenzeka xa kudibene nomoya. Ayiphenduli ne-nitrogen engaphantsi kwama-25°C, kwaye ayiphenduli neekhompawundi ze-hydrocarbon kubushushu begumbi. Umlilo kunye nokuqhuma kwe-silane ziziphumo zokusabela ne-oxygen. I-Silane inovakalelo olukhulu kwi-oxygen nomoya. I-Silane enoxinzelelo oluthile iya kusabela kakhulu ne-oxygen kubushushu obuyi--180°C. I-Silane ibe yeyona gesi ikhethekileyo ibalulekileyo esetyenziswa kwiinkqubo ze-semiconductor microelectronics, kwaye isetyenziswa ekulungiseleleni iifilimu ezahlukeneyo ze-microelectronic, kubandakanya iifilimu ze-single crystal, i-microcrystalline, i-polycrystalline, i-silicon oxide, i-silicon nitride, kunye ne-metal silicides. Ukusetyenziswa kwe-microelectronic ye-silane kusaphuhla nzulu: i-epitaxy yobushushu obuphantsi, i-epitaxy ekhethiweyo, kunye ne-heteroepitaxial epitaxy. Ayizizo kuphela izixhobo ze-silicon kunye neesekethe ezihlanganisiweyo ze-silicon, kodwa nakwizixhobo ze-compound semiconductor (gallium arsenide, i-silicon carbide, njl.njl.). Ikwanokusetyenziswa ekulungiseleleni izixhobo ze-superlattice quantum well. Kunokuthiwa i-silane isetyenziswa phantse kuzo zonke iindlela zokuvelisa iisekethe ezihlanganisiweyo eziphambili kwixesha lanamhlanje. Ukusetyenziswa kwe-silane njengefilimu kunye nokwaleka okuqulethe i-silicon kuye kwanda ukusuka kushishino lwe-microelectronics yendabuko ukuya kwiindawo ezahlukeneyo ezifana nentsimbi, oomatshini, iikhemikhali kunye ne-optics. Olunye ukusetyenziswa kwe-silane kukwenziwa kwezixhobo ze-ceramic engine ezisebenza kakhulu, ngakumbi ukusetyenziswa kwe-silane ukwenza i-silicide (Si3N4, SiC, njl.njl.) itekhnoloji ye-micropowder itsala ingqalelo engakumbi.
①Elektroniki:
I-Silane isetyenziswa kwiileya ze-silicon ze-polycrystalline kwii-wafer ze-silicon xa kusenziwa ii-semiconductors, kunye nee-sealants.
②Ilanga:
I-Silane isetyenziswa ekwenzeni iimodyuli ze-photovoltaic zelanga.
③Ezemizi-mveliso:
Isetyenziswa kwiGlasi eluhlaza egcina amandla kwaye isetyenziswe kwinkqubo yefilimu encinci yokukhupha umphunga.
| Imveliso | Ulwelo lweSilane SiH4 | |
| Ubungakanani bephakheji | Isilinda se-47Ltr | Y-440L |
| Ukuzalisa Ubunzima Obupheleleyo/Isilinda | Iikhilogram ezili-10 | Iikhilogram ezili-125 |
| Ubungakanani obulayishwe kwisikhongozeli se-20' | IiCyls ezingama-250 | IiCyls ezi-8 |
| Ubunzima obupheleleyo | Iitoni ezi-2.5 | Itoni e-1 |
| Ubunzima beSilinda | Iikhilogram ezingama-52 | 680Kgs |
| Ivalvu | CGA632/DISS632 | |
①Iminyaka engaphezu kweshumi ikwimarike;
②Umenzi wesatifikethi se-ISO;
③Ukuhanjiswa okukhawulezayo;
④Umthombo wezinto ezikrwada ezizinzileyo;
⑤ Inkqubo yohlalutyo olukwi-intanethi yokulawula umgangatho kwinyathelo ngalinye;
⑥Imfuneko ephezulu kunye nenkqubo ecokisekileyo yokuphatha isilinda ngaphambi kokuyizalisa;
⑦Ucoceko: umgangatho ophezulu we-elektroniki ococekileyo;
⑧Ukusetyenziswa: izixhobo zeseli zelanga; ukwenza i-polysilicon ecocekileyo kakhulu, i-silicon oxide kunye ne-optical fiber; ukwenziwa kweglasi enemibala.