Itekhnoloji yokuphumelela eyomileyo yenye yeenkqubo eziphambili. Irhasi ye-etching ye-etching sisixhobo esiphambili kwimveliso ye-semiconductor kunye nomthombo obalulekileyo wegesi ye-plasma etching. Intsebenzo yayo ichaphazela ngokuthe ngqo umgangatho kunye nokusebenza kwemveliso yokugqibela. Eli nqaku libelana ngokusebenzisa iigesi ezisetyenziswayo ezisetyenziswayo kwi-etching ye-etching ye-etching.
I-Fluorine-esekwe kwiigesi: ezinjeI-Carbon Tetrafluoride (CF4), Hexusluoroethane (C2F6), i-trifluodhane (CHF3) kunye ne-perfluopanepane (c3f8). Ezi gesi zinokuvelisa ngempumelelo i-fluorides eguqukayo xa i-ethaticon kunye ne-silicon compourts, emva koko ifezekisa ukususwa kwezinto.
Iigesi ezisekwe kwi-chlorine: ezinje nge-chlorine (cl2),I-boron ye-boron ye-boron (BCL3)kunye ne-silicon tetrachloride (i-sicl4). Iigesi ezisekwe kwi-chlorine zinokubonelela nge-pheride i-ions ngexesha lenkqubo yokuphucula, enceda ekuphuculeni inqanaba lokufumana kunye nokukhetha.
I-Bromined-esekwe kwi-Gases: ezinje nge-bromino (br2) kunye ne-Bromine Idider (ibr). I-Brominer-esekwe kwi-GADES inokubonelela ngentsebenzo ebonakalayo kwiinkqubo ezithile ze-etching, ngakumbi xa i-etching ngezinto ezinzima njenge-silicon carbide.
I-nitrogen esekwe kwi-nitrogen kunye ne-thesygen esekwe kwi-nitrogen Ezi gesi zihlala zisetyenziselwa ukuhlengahlengisa iimeko zokuphendula kwinkqubo ye-etching yokuphucula ukukhetha kunye nokubonisa ulwakhiwo lwe-etching.
Ezi geses zifezekisa i-epchise ye-precien yendawo yokwenyama ngokudibeneyo yokudityaniswa komzimba kunye nokuphendula kwekhemikhali ngexesha le-plasma etching. Ukukhetha igesi ye-etching kuxhomekeke kuhlobo lwezinto eziza kutsalwa, iimfuno zokukhetha, kunye nenqanaba le-etch elinqwenelekayo.
IXESHA LOKUQALA: FEB-08-2025
