Itekhnoloji ye-etching eyomileyo yenye yeenkqubo eziphambili. Irhasi eyomileyo ye-etching yimathiriyeli ephambili kwimveliso ye-semiconductor kunye nomthombo obalulekileyo werhasi wokufakwa kweplasma. Ukusebenza kwayo kuchaphazela ngokuthe ngqo umgangatho kunye nokusebenza kwemveliso yokugqibela. Eli nqaku ikakhulu labelana ngezinto ezisetyenziswa ngokuqhelekileyo iigesi etching kwinkqubo eyomileyo etching.
Iigesi ezisekelwe kwi-fluorine: njengecarbon tetrafluoride (CF4), i-hexafluoroethane (C2F6), i-trifluoromethane (CHF3) kunye ne-perfluoropropane (C3F8). Ezi gesi zinokuvelisa ngokufanelekileyo i-fluoride eguquguqukayo xa ufaka i-silicon kunye neekhompawundi ze-silicon, ngaloo ndlela zifezekisa ukususwa kwezinto.
Iigesi ezisekelwe kwiklorini: njengeklorini (Cl2),iboron trichloride (BCl3)kunye nesilicon tetrachloride (SiCl4). Iigesi ezisekelwe kwi-chlorine zinokubonelela ngee-ion ze-chloride ngexesha lenkqubo ye-etching, enceda ekuphuculeni izinga lokubetha kunye nokukhetha.
Iigesi ezisekelwe kwi-Bromine: ezifana ne-bromine (Br2) kunye ne-bromine iodide (IBr). Iigesi ezisekwe kwi-Bromine zinokubonelela ngokusebenza ngcono kwe-etching kwiinkqubo ezithile ze-etching, ngakumbi xa ufaka izinto ezinzima ezifana ne-silicon carbide.
I-nitrogen-based based and oxygen-based gases: njenge-nitrogen trifluoride (NF3) kunye ne-oxygen (O2). Ezi gesi zidla ngokusetyenziselwa ukulungisa iimeko zokusabela kwinkqubo yokubhala ukuphucula ukukhetha kunye nokwalathiso lwe-etching.
Ezi gesi zifezekisa ukubethelwa okuchanekileyo komphezulu wezinto ngokudityaniswa kokutshiza komzimba kunye nokuphendula kweekhemikhali ngexesha le-plasma etching. Ukukhetha irhasi etshisiweyo kuxhomekeke kuhlobo lwezinto eziza kufakwa, iimfuno zokhetho lokuchongwa, kunye nesantya esifunwayo.
Ixesha lokuposa: Feb-08-2025
