Indima ye-Sulfur Hexusluoride kwiSilicon Nitride

I-Sulfuur Hexusluoride yirhasi enezixhobo eziguquguqukayo kwaye ihlala isetyenziswa kwi-IRC ephezulu ye-ARC egxothiweyo kwaye iguqulela, i-Specieds, njl. Njlwam. IBakala eliPhakamileyo le-elektroniki i-Sulfur Hexualluide yi-elektroniki ye-elektroniki, esetyenziswa ngokubanzi kwicandelo letekhnoloji ye-Microelectimics. Namhlanje, uNiu Ruide umhleli wegesi ekhethekileyo yueyue uya kwazisa ukusetyenziswa kwesalfure hexicon nitride ye-etching kunye nefuthe leeparamitha ezahlukeneyo.

Sixoxa ngenkqubo ye-SF6 ye-SF2 PLAX ye-SFOX Ireyithi, kwaye iphonononge ubudlelwane phakathi kokutshintsha kwenqanaba le-senx ye-etching kunye neentlobo zeentlobo zeplasma.

Izifundo ziye zafumanisa ukuba xa amandla ePlasma anyuka, iqondo lokuphuma linyuka; Ukuba inqanaba lokuhamba kwe-SF6 kwi-PLASMA liyanda, indlela ye-AMOMOM YENKONZO YAYENZA kwaye idityaniswe kakuhle nenqanaba lokuphatha. Ukongeza, emva kongeze igesi yeCidaic O2 phantsi kwenqanaba lokuhambahamba, kodwa kuya kuba nemilinganiselo yokuhamba kwe-o2 / ye-SF engama-O2 / i-O2 ye-O2 / sf6 ye-O2 / SFO ngeli xesha inkulu kune-O2 ayongezwa. . Kodwa kwangaxeshanye, i-AOTO kwiPlasma iyanda kwaye kulula ukwenza i-Siox okanye i-SINXO (YX) kunye ne-Atom yeFilimu, kokukhona kuya kubakho iiatom ze-FONK. Ke ngoko, izinga lokuthamba liqala ukucothisa xa umyinge we-O2 / SF6 usondele kwi-1. (3) Xa umyinge we-O2 / SF6 ungaphezulu kwe-1, iqondo lokuthengisa lincipha. Ngenxa yokwanda okukhulu kwi-O2, i-atom diam ingqubana ne-O2 kunye nefom, enciphisa uxinzelelo lwe-AOTO, ekhokelela ekunciphiseni kwinqanaba lokuthatha. Ingabonwa koku xa u-O2 kongezwa, umlinganiselo wokuhamba we-O2 / SF6 uphakathi kwe-0.2 no-0.8, kwaye owona mgangatho we-elking onokufunyanwa.