Indima ye-sulphur hexafluoride kwi-silicon nitride etching

I-Sulfur hexafluoride yigesi eneempawu ezigqwesileyo zokugquma kwaye isoloko isetyenziselwa ukucima i-arc ephezulu ye-voltage kunye ne-transformers, i-high-voltage transmission lines, i-transformers, njl. . I-Electronic grade high-purity sulfur hexafluoride yi-etchant ye-elektroniki efanelekileyo, esetyenziswa ngokubanzi kwintsimi ye-microelectronics technology. Namhlanje, u-Niu Ruide umhleli wegesi ekhethekileyo u-Yueyue uya kwazisa ukusetyenziswa kwe-sulphur hexafluoride kwi-silicon nitride etching kunye nefuthe leeparamitha ezahlukeneyo.

Sixoxa nge-SF6 ye-plasma etching inkqubo ye-SiNx, kubandakanywa nokutshintsha amandla e-plasma, umlinganiselo wegesi we-SF6 / Yena kunye nokongeza i-cationic igesi ye-O2, ukuxoxa ngempembelelo yayo kwizinga lokunciphisa i-SiNx element yokukhusela i-TFT, kunye nokusebenzisa i-plasma radiation. i-spectrometer ihlalutya utshintsho loxinzelelo lweentlobo nganye kwi-SF6 / He, SF6 / He / O2 i-plasma kunye ne-SF6 ye-dissociation rate, kwaye iphonononga ubudlelwane phakathi kokutshintsha kwe-SiNx ye-etching rate kunye ne-plasma ye-concentration concentration.

Izifundo ziye zafumanisa ukuba xa amandla e-plasma enyuka, izinga lokunyuka liyanda; ukuba izinga lokuhamba kwe-SF6 kwi-plasma liyenyuka, i-concentration ye-atom ye-F iyanda kwaye ihambelana ngokufanelekileyo kunye nezinga lokulinganisa. Ukongezelela, emva kokongeza i-cationic igesi ye-O2 phantsi kwesantya esipheleleyo sokuhamba, kuya kuba nefuthe lokunyusa izinga lokunyuka, kodwa phantsi kwee-O2 / SF6 ezahlukeneyo zokuhamba, kuya kubakho iindlela zokuphendula ezahlukeneyo, ezinokuhlulwa zibe ngamacandelo amathathu. : (1) Umlinganiselo we-O2 / SF6 wokuhamba uncinci kakhulu, i-O2 inokunceda ukuchithwa kwe-SF6, kwaye isantya se-etching ngeli xesha sikhulu kunokuba i-O2 ingafakwanga. (2) Xa i-O2 / SF6 i-flow ratio inkulu kune-0.2 ukuya kwi-interval esondela kwi-1, ngeli xesha, ngenxa yobuninzi be-dissociation ye-SF6 ukwenza ii-athomu ze-F, izinga le-etching liphezulu; kodwa kwangaxeshanye, iiathom ze-O kwiplasma nazo ziyanda kwaye kulula ukwenza iSiOx okanye iSiNxO(yx) ngomphezulu wefilimu weSiNx, kwaye okukhona i-o athom zisanda, kokukhona kuya kuba nzima ngakumbi iiathom ze-F etching reaction. Ngoko ke, isantya se-etching siqala ukucotha xa umlinganiselo we-O2 / SF6 usondele kwi-1. (3) Xa umlinganiselo we-O2 / SF6 umkhulu kune-1, umlinganiselo we-etching uyancipha. Ngenxa yokunyuka okukhulu kwe-O2, i-athomu ye-F ehlukanisiweyo ingqubana ne-O2 kunye nefom ye-OF, enciphisa ukuxinwa kwee-athomu ze-F, okukhokelela ekunciphiseni izinga lokubetha. Inokubonwa kule nto ukuba xa i-O2 yongezwa, umlinganiselo wokuhamba kwe-O2 / SF6 uphakathi kwe-0.2 kunye ne-0.8, kwaye isantya esiphezulu se-etching sinokufumaneka.