Indima yesalfure hexafluoride ekugrumbeni kwe-silicon nitride

I-hexafluoride yesulfur yigesi eneempawu ezibalaseleyo zokuthintela kwaye idla ngokusetyenziswa kwi-high-voltage arc extinguishing kunye ne-transformers, imigca yokudlulisela i-high-voltage, ii-transformers, njl. Nangona kunjalo, ukongeza kule misebenzi, i-sulfur hexafluoride ingasetyenziswa njenge-electronic etchant. I-electronic grade high-purity sulfur hexafluoride yi-electronic etchant efanelekileyo, esetyenziswa kakhulu kwicandelo letekhnoloji ye-microelectronics. Namhlanje, umhleli wegesi okhethekileyo we-Niu Ruide uYueyue uza kwazisa ukusetyenziswa kwe-sulfur hexafluoride kwi-silicon nitride etching kunye nempembelelo yeeparamitha ezahlukeneyo.

Sixoxa ngenkqubo ye-SF6 plasma etching SiNx, kuquka ukutshintsha amandla e-plasma, umlinganiselo wegesi we-SF6/He kunye nokongeza i-cationic gas O2, sixoxa ngempembelelo yayo kwizinga lokugcagca le-SiNx element protection layer ye-TFT, kunye nokusebenzisa i-plasma radiation. I-spectrometer ihlalutya utshintsho loxinzelelo lwentlobo nganye kwi-SF6/He, SF6/He/O2 plasma kunye nezinga lokwahlukana kwe-SF6, kwaye sihlola ubudlelwane phakathi kotshintsho lwezinga lokugcagca le-SiNx kunye noxinzelelo lweentlobo ze-plasma.

Izifundo zifumanise ukuba xa amandla eplasma enyuka, izinga lokugrumba liyanda; ukuba izinga lokuhamba kweSF6 kwiplasma liyanda, uxinzelelo lwe-athomu ye-F luyanda kwaye luhambelana kakuhle nezinga lokugrumba. Ukongeza, emva kokongeza igesi ye-cationic O2 phantsi kwesantya sokuhamba esimiselweyo, iya kuba nefuthe lokunyusa izinga lokugrumba, kodwa phantsi kwemilinganiselo eyahlukeneyo yokuhamba kwe-O2/SF6, kuya kubakho iindlela ezahlukeneyo zokusabela, ezinokwahlulwa zibe ngamacandelo amathathu: (1) Umlinganiselo wokuhamba kwe-O2/SF6 umncinci kakhulu, i-O2 inokunceda ukwahlukana kwe-SF6, kwaye izinga lokugrumba ngeli xesha likhulu kunelo xa i-O2 ingongezwanga. (2) Xa umlinganiselo wokuhamba kwe-O2/SF6 ungaphezulu kwe-0.2 kwisithuba esisondela kwi-1, ngeli xesha, ngenxa yenani elikhulu lokugrumba kwe-SF6 ukwenza ii-athomu ze-F, izinga lokugrumba liphezulu; kodwa kwangaxeshanye, ii-athomu ze-O kwi-plasma nazo ziyanda kwaye Kulula ukwenza i-SiOx okanye i-SiNxO(yx) ngomphezulu wefilimu ye-SiNx, kwaye okukhona ii-athomu ze-O zisanda, kokukhona ii-athomu ze-F ziya kuba nzima kwi-etching reaction. Ke ngoko, izinga lokuqhekeza liqala ukucotha xa umlinganiselo we-O2/SF6 usondele kwi-1. (3) Xa umlinganiselo we-O2/SF6 ungaphezulu kwe-1, izinga lokuqhekeza liyancipha. Ngenxa yokwanda okukhulu kwe-O2, ii-athomu ze-F ezidityanisiweyo zidibana ne-O2 kunye nefomu ye-OF, enciphisa uxinzelelo lwee-athomu ze-F, nto leyo ebangela ukwehla kwesantya sokuqhekeza. Kuyabonakala koku ukuba xa i-O2 yongezwa, umlinganiselo wokuhamba kwe-O2/SF6 uphakathi kwe-0.2 kunye ne-0.8, kwaye umlinganiselo wokuchonga ongcono unokufumaneka.