Igesi yelaser isetyenziswa kakhulu kwi-laser annealing kunye ne-lithography gas kwishishini le-elektroniki. Ngenxa yobuchule bokutsha kwezikrini zefowuni eziphathwayo kunye nokwandiswa kweendawo zokusetyenziswa, ubungakanani bemarike ye-polysilicon enobushushu obuphantsi buya kwandiswa ngakumbi, kwaye inkqubo ye-laser annealing iphucule kakhulu ukusebenza kwe-TFTs. Phakathi kweegesi ze-neon, i-fluorine, kunye ne-argon ezisetyenziswa kwi-ArF excimer laser ekwenzeni ii-semiconductors, i-neon ithatha ngaphezulu kwe-96% yomxube wegesi yelaser. Ngokuphucuka kwetekhnoloji ye-semiconductor, ukusetyenziswa kwee-excimer lasers kuye kwanda, kwaye ukungeniswa kwetekhnoloji yokutyhila kabini kukhokelele ekwandeni okukhulu kwemfuno yegesi ye-neon esetyenziswa zii-ArF excimer lasers. Bexhamla ekukhuthazeni indawo yeegesi ezikhethekileyo ze-elektroniki, abavelisi basekhaya baya kuba nendawo engcono yokukhula kwemarike kwixesha elizayo.
Umatshini weLithography sisixhobo esiphambili sokwenziwa kwe-semiconductor. I-Lithography ichaza ubungakanani bee-transistors. Uphuhliso oludibeneyo lwekhonkco loshishino lwe-lithography luyisitshixo sokuphumelela komatshini we-lithography. Izixhobo ze-semiconductor ezifanayo ezifana ne-photoresist, igesi ye-photolithography, i-photomask, kunye nezixhobo zokufaka kunye nokuphuhlisa zinomxholo ophezulu wetekhnoloji. Igesi yeLithography yigesi eveliswa ngumatshini we-lithography nge-ultraviolet. Iigesi ezahlukeneyo ze-lithography zinokuvelisa imithombo yokukhanya yee-wavelengths ezahlukeneyo, kwaye ubude bazo buchaphazela ngokuthe ngqo isisombululo somatshini we-lithography, ongomnye we-cores yomatshini we-lithography. Ngo-2020, intengiso iyonke yehlabathi yoomatshini be-lithography iya kuba ziiyunithi ezingama-413, apho iiyunithi ezingama-258 zentengiso ze-ASML zibalwa ngama-62%, iiyunithi ezili-122 zentengiso zeCanon zibalwa ngama-30%, kwaye iiyunithi ezingama-33 zentengiso zeNikon zibalwa ngama-8%.
Ixesha lokuthumela: Okthobha-15-2021
