Iigesi ezikhethekileyoyahluka jikeleleiigesi zemizi-mvelisokuba zinosetyenziso olukhethekileyo kwaye zisetyenziswa kwiinkalo ezithile. Zineemfuno ezithile zokucoceka, umxholo wokungcola, ukwakheka, kunye neempawu zomzimba kunye neekhemikhali. Xa kuthelekiswa neegesi zemizi-mveliso, iigesi ezikhethekileyo zihluke kakhulu kwiindidi ezahlukeneyo kodwa zinemveliso encinci kunye nexabiso lokuthengisa.

Iiigesi ezixubileyokwayeiigesi zokulinganisa umgangathoesiqhele ukuzisebenzisa zizinto ezibalulekileyo zeegesi ezikhethekileyo. Iigesi ezixubeneyo zihlala zohlulwe zibe ziigesi ezixubeneyo ngokubanzi kunye neegesi ezixubeneyo zombane.

Iigesi ezixubeneyo ngokubanzi ziquka:laser exutywe igesi, ukufunyanwa kwesixhobo segesi exutyiweyo, i-welding igesi exutywe, ukugcinwa kwegesi exutywe, ukukhanya kombane umthombo wegesi exutywe, uphando lwezonyango kunye nophando lwebhayoloji igesi exubeneyo, i-disinfection kunye ne-sterilization yegesi exutywe, isixhobo se-alarm exutywe ngegesi, i-high-pressure mix gas, kunye ne-zero-grade air.

Imixube yerhasi ye-elektroniki ibandakanya imixube yerhasi ye-epitaxial, imixube yerhasi yokubeka umphunga wekhemikhali, imixube yerhasi yedoping, imixube yerhasi ye-etching, kunye neminye imixube yerhasi yombane. Le mixube yegesi idlala indima ebaluleke kakhulu kwi-semiconductor kunye ne-microelectronics kumashishini kwaye isetyenziswa ngokubanzi kwisekethe enkulu edibeneyo (LSI) kunye nokuveliswa kwesekethe edibeneyo (VLSI) enkulu kakhulu, kunye nokuveliswa kwesixhobo se-semiconductor.

5 Iintlobo zeegesi ezixutywe nge-elektroniki zezona zisetyenziswa kakhulu

Doping igesi edibeneyo

Ukwenziwa kwezixhobo ze-semiconductor kunye neesekethe ezidibeneyo, ukungcola okuthile kungeniswa kwizinto eziphathekayo ze-semiconductor ukunika i-conductivity efunwayo kunye nokumelana, okwenza ukuveliswa kwe-resistors, i-PN junctions, iileyile ezingcwatywe kunye nezinye izinto. Iigesi ezisetyenziswa kwinkqubo yedoping zibizwa ngokuba yi-dopant gases. Ezi gesi ziquka i-arsine, i-phosphine, i-phosphorus trifluoride, i-phosphorus pentafluoride, i-arsenic trifluoride, i-arsenic pentafluoride,boron trifluoride, kunye ne-diborane. Umthombo we-dopant ngokuqhelekileyo uxutywe kunye negesi ethwala (njenge-argon kunye ne-nitrogen) kwikhabhinethi yomthombo. Irhasi exutyiweyo ithi ngokuqhubekayo itofwe kwiziko lokusasaza kwaye ijikeleze kwi-wafer, ibeka i-dopant kumphezulu we-wafer. I-dopant emva koko isabela kunye ne-silicon ukwenza isinyithi se-dopant esifudukela kwi-silicon.

Umxube werhasi yokukhula kwe-Epitaxial

Ukukhula kwe-Epitaxial yinkqubo yokubeka kunye nokukhulisa i-crystal material enye kwi-substrate surface. Kwishishini le-semiconductor, iigesi ezisetyenziselwa ukukhula enye okanye ngaphezulu kwezinto zisebenzisa i-chemical vapor deposition (CVD) kwi-substrate ekhethwe ngononophelo ibizwa ngokuba yi-epitaxial gases. Iigesi eziqhelekileyo ze-silicon epitaxial ziquka i-dihydrogen dichlorosilane, i-silicon tetrachloride, kunye ne-silane. Ngokuyintloko zisetyenziselwa i-epitaxial silicon deposition, i-polycrystalline silicon deposition, i-silicon oxide ifilimu yokubeka ifilimu, i-silicon nitride film deposition, kunye ne-amorphous silicon film deposition kwiiseli zelanga kunye nezinye izixhobo ze-photosensitive.

Igesi yokufakelwa kwe-ion

Kwisixhobo se-semiconductor kunye nokuveliswa kwesekethe edibeneyo, iigesi ezisetyenziswa kwinkqubo yokufakelwa kwe-ion zibizwa ngokudibeneyo njengeegesi zokufakelwa kwe-ion. Ukungcola kwe-ionized (okufana ne-boron, i-phosphorus, kunye ne-arsenic ion) zikhawuleza ukuya kwinqanaba eliphezulu lamandla ngaphambi kokuba zifakwe kwi-substrate. Itekhnoloji yokufakelwa kwe-ion isetyenziswa kakhulu ukulawula amandla ombane. Ubungakanani bokungcola okumiliselweyo kunokumiselwa ngokulinganisa i-ion beam yangoku. Iigesi zokufakelwa kwe-ion ngokuqhelekileyo ziquka i-phosphorus, i-arsenic, kunye neegesi ze-boron.

Ukukhupha igesi edibeneyo

I-Etching yinkqubo yokucima umphezulu ogqityiweyo (ofana nefilimu yesinyithi, ifilimu ye-silicon oxide, njl. njl.) kwi-substrate engagqunywanga yi-photoresist, ngelixa igcina indawo egqunywe yi-photoresist, ukuze ufumane ipateni yomfanekiso ofunekayo kumphezulu we-substrate.

Umxube weGesi yoMphunga weMichiza

I-Chemical vapor deposition (CVD) isebenzisa iikhompawundi eziguquguqukayo ukufaka into enye okanye ikhompawundi ngokusabela kwekhemikhali yesigaba somphunga. Le yindlela yokwenza ifilim esebenzisa iikhemikhali zesigaba somphunga. Iigesi zeCVD ezisetyenziswayo ziyahluka ngokuxhomekeke kuhlobo lwefilimu eyenziwayo.