Iigesi ezikhethekileyoyahlukile kwi-generaliigesi zoshishinokuba zinokusetyenziswa okukhethekileyo kwaye zisetyenziswa kwiindawo ezithile. Zineemfuno ezithile zobumsulwa, umxholo wokungcola, ukwakheka, kunye neempawu zomzimba nezekhemikhali. Xa kuthelekiswa neegesi zoshishino, iigesi ezikhethekileyo zahlukile kakhulu kwiintlobo ngeentlobo kodwa zinemveliso encinci kunye nomthamo wokuthengisa.

Iiigesi ezixutyiweyokwayeiigesi zokulinganisa eziqhelekileyoIigesi ezixutyiweyo esizisebenzisa rhoqo zizinto ezibalulekileyo kwiigesi ezikhethekileyo. Iigesi ezixutyiweyo zihlala zahlulwe zibe ziigesi ezixutyiweyo ngokubanzi kunye neegesi ezixutyiweyo ze-elektroniki.

Iigesi ezixutyiweyo ngokubanzi ziquka:igesi exutyiweyo yelaser, ukufunyanwa kwezixhobo igesi exutyiweyo, ukuwelda igesi exutyiweyo, ukugcinwa kwegesi exutyiweyo, umthombo wokukhanya kombane, uphando lwezonyango nolwebhayoloji igesi exutyiweyo, ukubulala iintsholongwane kunye nokubulala iintsholongwane igesi exutyiweyo, i-alamu yezixhobo igesi exutyiweyo, igesi exutyiweyo enoxinzelelo oluphezulu, kunye nomoya ongenalo inqanaba.

Imixube yegesi ye-elektroniki ibandakanya imixube yegesi ye-epitaxial, imixube yegesi ye-chemical vapor deposition, imixube yegesi ye-doping, imixube yegesi ye-etching, kunye neminye imixube yegesi ye-elektroniki. Le mixube yegesi idlala indima ebalulekileyo kumashishini e-semiconductor kunye ne-microelectronics kwaye isetyenziswa kakhulu kwimveliso yesekethe edibeneyo enkulu (LSI) kunye nesekethe edibeneyo enkulu kakhulu (VLSI), kunye nakwimveliso yezixhobo ze-semiconductor.

Iindidi ezi-5 zeegesi ezixutyiweyo ze-elektroniki zezona zisetyenziswa kakhulu

Ukuxuba igesi exutyiweyo ngokusebenzisa i-doping

Ekwenziweni kwezixhobo ze-semiconductor kunye neesekethe ezidibeneyo, ukungcola okuthile kungeniswa kwizixhobo ze-semiconductor ukuze kunikwe ukuhanjiswa kombane kunye nokumelana okufunekayo, okuvumela ukuveliswa kwee-resistor, ii-PN junctions, iileya ezingcwatyiweyo, kunye nezinye izinto. Iigesi ezisetyenziswa kwinkqubo ye-doping zibizwa ngokuba zii-dopant gases. Ezi gesi ziquka ikakhulu i-arsine, i-phosphine, i-phosphorus trifluoride, i-phosphorus pentafluoride, i-arsenic trifluoride, i-arsenic pentafluoride,i-boron trifluoride, kunye ne-diborane. Umthombo we-dopant udla ngokuxutywa negesi ethwala (efana ne-argon kunye ne-nitrogen) kwikhabhathi yomthombo. Igesi exutyiweyo emva koko ifakwa rhoqo kwisithando sokusasazwa kwaye ijikeleze i-wafer, ibeka i-dopant kumphezulu we-wafer. I-dopant emva koko isabela kunye ne-silicon ukwenza isinyithi se-dopant esifudukela kwi-silicon.

Umxube wegesi yokukhula kwe-Epitaxial

Ukukhula kwe-Epitaxial yinkqubo yokufaka nokukhulisa into enye yekristale kumphezulu we-substrate. Kwishishini le-semiconductor, iigesi ezisetyenziselwa ukukhulisa umaleko omnye okanye ngaphezulu wezinto kusetyenziswa i-chemical vapor deposition (CVD) kwi-substrate ekhethiweyo ngononophelo zibizwa ngokuba zii-epitaxial gases. Iigesi eziqhelekileyo ze-silicon epitaxial ziquka i-dihydrogen dichlorosilane, i-silicon tetrachloride, kunye ne-silane. Zisetyenziswa kakhulu kwi-epitaxial silicon deposition, i-polycrystalline silicon deposition, i-silicon oxide film deposition, i-silicon nitride film deposition, kunye ne-amorphous silicon film deposition kwiiseli zelanga kunye nezinye izixhobo ezibona ukukhanya.

Igesi yokufakelwa kwe-ion

Kwimveliso yezixhobo ze-semiconductor kunye nesekethe edibeneyo, iigesi ezisetyenziswa kwinkqubo yokufakelwa kwee-ion zibizwa ngokuba ziigesi zokufakelwa kwee-ion. Ukungcola okufakwe kwi-ion (okufana ne-boron, i-phosphorus, kunye nee-arsenic ions) kukhawuleziswa ukuya kwinqanaba eliphezulu lamandla ngaphambi kokuba kufakwe kwi-substrate. Itekhnoloji yokufakelwa kwee-ion isetyenziswa kakhulu ukulawula i-threshold voltage. Ubungakanani bokungcola okufakwe kwi-ion bunokufunyanwa ngokulinganisa umbane we-ion beam. Iigesi zokufakelwa kwee-ion zihlala ziquka iigesi ze-phosphorus, i-arsenic, kunye ne-boron.

Ukuqhekeza igesi exutyiweyo

Ukugrumba yinkqubo yokugrumba umphezulu ocutshungulweyo (njengefilimu yesinyithi, ifilimu ye-silicon oxide, njl.njl.) kwi-substrate engagqunywanga yi-photoresist, ngelixa kugcinwa indawo egqunywe yi-photoresist, ukuze kufunyanwe ipateni yomfanekiso efunekayo kumphezulu we-substrate.

Umxube weGesi yokuSuswa koMphunga weKhemikhali

Ukufakwa komphunga wekhemikhali (i-CVD) kusebenzisa iikhompawundi eziguquguqukayo ukufaka into enye okanye ikhompawundi nge-chemical reaction ye-vapor-phase. Le yindlela yokwenza ifilimu esebenzisa ii-chemical reaction ze-vapor-phase. Iigesi ze-CVD ezisetyenziswayo ziyahluka ngokuxhomekeke kuhlobo lwefilimu eyenziwayo.