I-Epitaxial (ukukhula)I-Mixed Gas

Kwishishini le-semiconductor, igesi esetyenziselwa ukukhulisa umaleko omnye okanye ngaphezulu wezinto ngokubeka umphunga wekhemikhali kwi-substrate ekhethiweyo ngononophelo ibizwa ngokuba yi-epitaxial gas.

Iigesi ze-silicon epitaxial ezisetyenziswa rhoqo ziquka i-dichlorosilane, i-silicon tetrachloride kunyeisilaneIsetyenziswa kakhulu ekubekeni i-silicon epitaxial, ekubekeni ifilimu ye-silicon oxide, ekubekeni ifilimu ye-silicon nitride, ekubekeni ifilimu ye-silicon engabonakaliyo kwiiseli zelanga kunye nezinye ii-photoreceptors, njl. I-Epitaxy yinkqubo apho kufakwa khona izinto zekristale enye kwaye zikhuliswe phezu komphezulu we-substrate.

Igesi Exutyiweyo Yokutsalwa Komphunga Wekhemikhali (i-CVD)

I-CVD yindlela yokufaka izinto ezithile kunye neekhompawundi ngeempendulo zeekhemikhali zesigaba segesi kusetyenziswa iikhompawundi eziguquguqukayo, oko kukuthi, indlela yokwenza ifilimu kusetyenziswa iimpembelelo zeekhemikhali zesigaba segesi. Ngokuxhomekeke kuhlobo lwefilimu eyenziweyo, igesi ye-chemical vapor deposition (CVD) esetyenziswayo nayo yahlukile.

Ukusebenzisa iziyobisiIgesi exutyiweyo

Ekwenziweni kwezixhobo ze-semiconductor kunye neesekethe ezidibeneyo, ukungcola okuthile kufakwa kwizinto ze-semiconductor ukuze kunikwe izixhobo uhlobo lokuqhuba olufunekayo kunye nokumelana okuthile ukuvelisa ii-resistor, ii-PN junctions, iileya ezingcwatyiweyo, njl. Igesi esetyenziswa kwinkqubo ye-doping ibizwa ngokuba yi-doping gas.

Ikakhulu ibandakanya i-arsine, i-phosphine, i-phosphorus trifluoride, i-phosphorus pentafluoride, i-arsenic trifluoride, i-arsenic pentafluoride,i-boron trifluoride, uDiborane, njl. njl.

Ngokwesiqhelo, umthombo we-doping uxutywa negesi ethwala (efana ne-argon kunye ne-nitrogen) kwikhabhathi yomthombo. Emva kokuxuba, ukuhamba kwegesi kufakwa rhoqo kwi-diffusion oven kwaye kujikeleze i-wafer, kufakwe ii-dopants kumphezulu we-wafer, kuze emva koko kusebenze ne-silicon ukuvelisa iintsimbi ezifakwe ii-doped ezifudukela kwi-silicon.

UkukrolaUmxube wegesi

Ukugrumba kukugrumba umphezulu wokucubungula (njengefilimu yesinyithi, ifilimu ye-silicon oxide, njl.njl.) kwi-substrate ngaphandle kokugrumba nge-photoresist, ngelixa kugcinwa indawo nge-photoresist masking, ukuze kufunyanwe ipateni yomfanekiso efunekayo kumphezulu we-substrate.

Iindlela zokugrumba ziquka ukugrumba ngamakhemikhali amanzi kunye nokugrumba ngamakhemikhali awomileyo. Igesi esetyenziswa ekugrumbeni ngamakhemikhali awomileyo ibizwa ngokuba yigesi yokugrumba.

Igesi yokuqhekeza idla ngokuba yigesi ye-fluoride (i-halide), efana ne-i-tetrafluoride yekhabhoni, i-nitrogen trifluoride, i-trifluoromethane, i-hexafluoroethane, i-perfluoropropane, njl.njl.