I-Epitaxial (ukukhula)Uxube uGas

Kwishishini le-semiconductor, irhasi esetyenziselwa ukukhulisa umaleko omnye okanye ngaphezulu kwezinto ngokubekwa komphunga wekhemikhali kwi-substrate ekhethwe ngononophelo ibizwa ngokuba yi-epitaxial gas.

Iigesi ze-silicon epitaxial ezisetyenziswa ngokuqhelekileyo ziquka i-dichlorosilane, i-silicon tetrachloride kunyesilane. Isetyenziswa kakhulu kwi-epitaxial silicon deposition, i-silicon oxide yefilimu, i-silicon nitride film deposition, i-amorphous silicon film deposition kwiiseli zelanga kunye nezinye ii-photoreceptors, njl.

I-Chemical Vapor Deposition (CVD) iMixed Gas

I-CVD yindlela yokufaka izinto ezithile kunye ne-compounds ngesigaba segesi ukuphendula kweekhemikhali kusetyenziswa iikhompawundi eziguquguqukayo, oko kukuthi, indlela yokwenza ifilimu usebenzisa i-gas phase reaction reactions. Ngokuxhomekeke kuhlobo lwefilimu eyenziweyo, igesi yekhemikhali ye-vapor deposition (CVD) esetyenziswayo nayo yahlukile.

DopingIGas exutyiweyo

Ukwenziwa kwezixhobo ze-semiconductor kunye neesekethe ezidibeneyo, ukungcola okuthile kufakwe kwizinto eziphathekayo ze-semiconductor ukunika izixhobo ezifunekayo uhlobo lwe-conductivity kunye ne-resistiveivity ethile yokuvelisa i-resistors, i-PN junctions, iileyile ezingcwatywe, njl.

Ikakhulu ibandakanya i-arsine, i-phosphine, i-phosphorus trifluoride, i-phosphorus pentafluoride, i-arsenic trifluoride, i-arsenic pentafluoride,boron trifluoride, diborane, njl.

Ngokuqhelekileyo, umthombo we-doping uxutywe kunye negesi ethwala (njenge-argon kunye ne-nitrogen) kwikhabhinethi yomthombo. Emva kokuxubana, ukuhamba kwerhasi kuhlatywa ngokuqhubekayo kwiziko lokusasaza kwaye kujikeleze isiqwenga se-wafer, sibeka i-dopants kumphezulu we-wafer, kwaye emva koko isabela nge-silicon ukwenza iintsimbi ezifakwe kwi-silicone.

EtchingUmxube wegesi

I-Etching kukukhupha umphezulu wokucubungula (njengefilimu yesinyithi, ifilimu ye-silicon oxide, njl. njl.) kwi-substrate ngaphandle kwe-photoresist masking, ngelixa ugcina indawo nge-photoresist masking, ukuze ufumane ipateni yomfanekiso ofunekayo kumphezulu we-substrate.

Iindlela ze-etching zibandakanya ukufakwa kweekhemikhali ezimanzi kunye ne-chemical etching eyomileyo. Irhasi esetyenziswa kwikhemikhali eyomileyo ebizwa ngokuba yi-etching gas.

Etching igesi idla ngokuba fluoride gas (halide), ezifanacarbon tetrafluoride, initrogen trifluoride, trifluoromethane, hexafluoroethane, perfluoropropane, njl.