Inkcazo | 99.999% |
Ioksijini+Argon | ≤1ppm |
Nitrogen | ≤4 ppm |
Ukufuma(H2O) | ≤3 ppm |
HF | ≤0.1 ppm |
CO | ≤0.1 ppm |
CO2 | ≤1 ppm |
SF6 | ≤1 ppm |
IiHalocarbynes | ≤1 ppm |
Ukungcola ngokupheleleyo | ≤10 ppm |
Ikhabhon tetrafluoride yihalogenated hydrocarbon enekhemikhali ifomula CF4. Inokuthi ithathwe njenge-halogenated hydrocarbon, i-halogenated methane, i-perfluorocarbon, okanye njenge-inorganic compound. Ikhabhon tetrafluoride yigesi engenambala nevumba, enganyibilikiyo emanzini, enyibilika kwibenzene nakwiklorofomu. Uzinzile phantsi kobushushu obuqhelekileyo kunye noxinzelelo, ugweme i-oxidants enamandla, izinto ezinokutsha okanye ezinokutsha. I-gas engatshiyo, uxinzelelo lwangaphakathi lwesitya luya kwanda xa lubonakaliswe ukushisa okuphezulu, kwaye kukho ingozi yokuqhaqha kunye nokuqhuma. Izinzile ngokwekhemikhali kwaye ayinakutsha. Kuphela i-reagent yesinyithi ye-ammonia-sodium yolwelo inokusebenza kwiqondo lokushisa. Ikhabhoni tetrafluoride yirhasi ebangela ukuba kubekho impembelelo yegreenhouse. Izinzile kakhulu, inokuhlala kwi-atmosfera ixesha elide, kwaye iyirhasi yegreenhouse enamandla kakhulu. Ikhabhoni tetrafluoride isetyenziswa kwinkqubo yokufakwa kweplasma yeesekethe ezahlukeneyo ezidibeneyo. Ikwasetyenziswa njengerhasi yelaser, kwaye isetyenziswa kwizikhenkcisi ezinobushushu obuphantsi, izinyibilikisi, izithambisi, imathiriyeli yokugquma, kunye nezipholileyo kwizixhobo zokubona infrared. Yeyona gesi isetyenziswa kakhulu kwiplasma etching kushishino lwemicroelectronics. Ingumxube wegesi ye-tetrafluoromethane ephezulu-yobunyulu kunye ne-tetrafluoromethane yegesi ephezulu yokucoca kunye ne-oksijeni ephezulu. Inokusetyenziswa ngokubanzi kwi-silicon, i-silicon dioxide, i-silicon nitride, kunye neglasi ye-phosphosilicate. Ukufakwa kwezixhobo zefilimu ezibhityileyo ezifana ne-tungsten kunye ne-tungsten ikwasetyenziswa ngokubanzi ekucoceni umphezulu wezixhobo zombane, ukuveliswa kweeseli zelanga, itekhnoloji yelaser, ifriji yobushushu obuphantsi, ukuhlolwa kokuvuza, kunye nesepha kwimveliso yesekethe eprintiweyo. Isetyenziswe njengefriji ephantsi yobushushu kunye ne-plasma iteknoloji eyomileyo ye-etching kwiisekethe ezidibeneyo. Amanyathelo okuthintela ugcino: Gcina kwindawo epholileyo, enegesi engatshiyo yesitora. Zigcine kude nomlilo kunye nemithombo yobushushu. Ubushushu bokugcina akufunekanga budlule kuma-30°C. Kufuneka igcinwe ngokwahlukileyo kwizinto ezinokutsha ezilula (ezinokutsha) kunye ne-oxidants, kwaye ugweme ukugcinwa okuxubileyo. Indawo yokugcina kufuneka ixhotyiswe ngezixhobo zonyango olungxamisekileyo oluvuzayo.
① Isikhenkcisi:
I-Tetrafluoromethane ngamanye amaxesha isetyenziswa njengefriji yobushushu obuphantsi.
② Ukurhweba:
Isetyenziswa kwi-electronics microfabrication yodwa okanye idityaniswe ne-oksijini njenge-plasma etchant ye-silicon, i-silicon dioxide, kunye ne-silicon nitride.
Imveliso | Ikhabhon TetrafluorideCF4 | ||
Ubungakanani bepakethi | 40Ltr Isilinda | 50Ltr Isilinda | |
Ukuzalisa ubunzima beNet / Cyl | 30Kgs | 38Kgs | |
I-QTY ilayishwe kwi-20'Container | 250 Cyls | 250 Cyls | |
Ubunzima buBonke | 7.5 iitoni | 9.5 iitoni | |
Cylinder Tare Weight | 50Kgs | 55Kgs | |
Ivalve | CGA 580 |
①Ukucoceka okuphezulu, indawo yamva nje;
②ISO umenzi wesatifikethi;
③Ukuhanjiswa okukhawulezayo;
④Inkqubo yokuhlalutya kwi-intanethi yokulawula umgangatho kwinqanaba ngalinye;
⑤Imfuno ephezulu kunye nenkqubo enobuchule yokuphatha isilinda ngaphambi kokuzaliswa;