| Inkcazo | 99.999% |
| Ioksijini + iArgon | ≤1ppm |
| I-nitrogen | ≤4 ppm |
| Ukufuma (H2O) | ≤3 ppm |
| HF | ≤0.1 ppm |
| CO | ≤0.1 ppm |
| I-CO2 | ≤1 ppm |
| SF6 | ≤1 ppm |
| IiHalocarbyne | ≤1 ppm |
| Ukungcola okupheleleyo | ≤10 ppm |
I-Carbon tetrafluoride yi-halogenated hydrocarbon enefomyula yekhemikhali i-CF4. Ingathathwa njenge-halogenated hydrocarbon, i-halogenated methane, i-perfluorocarbon, okanye njenge-inorganic compound. I-Carbon tetrafluoride yigesi engenambala nengenavumba, ayinyibiliki emanzini, iyanyibilika kwi-benzene nakwi-chloroform. Izinzile phantsi kobushushu obuqhelekileyo kunye noxinzelelo, ziphephe ii-oxidants ezinamandla, izinto ezinokutsha okanye ezinokutsha. Igesi engatshayo, uxinzelelo lwangaphakathi lwesikhongozeli luya kwanda xa luvezwa kubushushu obuphezulu, kwaye kukho ingozi yokuqhekeka nokuqhuma. Izinzile ngokweekhemikhali kwaye ayitshayo. Yi-reagent yesinyithi ye-ammonia-sodium engamanzi kuphela enokusebenza kubushushu begumbi. I-Carbon tetrafluoride yigesi ebangela isiphumo se-greenhouse. Izinzile kakhulu, inokuhlala emoyeni ixesha elide, kwaye yigesi enamandla kakhulu ye-greenhouse. I-Carbon tetrafluoride isetyenziswa kwinkqubo yokugrumba i-plasma kwiisekethe ezahlukeneyo ezidibeneyo. Ikwasetyenziswa njengegesi yelaser, kwaye isetyenziswa kwiifriji, izinyibilikisi, ii-lubricants, izinto zokuthintela ubushushu, kunye nee-coolants kwi-infrared detectors. Yeyona gesi isetyenziswa kakhulu kwi-plasma etching kwishishini le-microelectronics. Ngumxube we-tetrafluoromethane high-purity gas kunye ne-tetrafluoromethane high-purity gas kunye ne-high-purity oxygen. Ingasetyenziswa kakhulu kwi-silicon, i-silicon dioxide, i-silicon nitride, kunye neglasi ye-phosphosilicate. Ukugcagca kwezinto zefilimu ezincinci ezifana ne-tungsten kunye ne-tungsten kukwasetyenziswa kakhulu ekucoceni umphezulu wezixhobo ze-elektroniki, ukuvelisa iiseli zelanga, iteknoloji ye-laser, ukufrijiza obushushu obuphantsi, ukuhlolwa kokuvuza, kunye ne-detergent kwimveliso yesekethe eprintiweyo. Isetyenziswa njenge-refrigerant yobushushu obuphantsi kunye neteknoloji ye-plasma etching eyomileyo kwiisekethe ezidibeneyo. Amanyathelo okhuseleko okugcina: Gcina kwindawo yokugcina igesi epholileyo, enomoya ongatshiyo. Gcina kude nomlilo kunye nemithombo yobushushu. Ubushushu bokugcina akufuneki budlule kwi-30°C. Ifanele igcinwe ngokwahlukileyo kwizinto ezitshayo (ezinokutsha) kunye nezinto ezitshisayo, kwaye kuthintelwe ukugcinwa okuxutyiweyo. Indawo yokugcina kufuneka ixhotyiswe ngezixhobo zonyango olungxamisekileyo oluvuzayo.
① Isiqandisi:
I-Tetrafluoromethane ngamanye amaxesha isetyenziswa njengefriji eshushu kakhulu.
② Ukukrola:
Isetyenziswa kwi-electronics microfabrication yodwa okanye xa idityaniswe ne-oxygen njenge-plasma etchant ye-silicon, i-silicon dioxide, kunye ne-silicon nitride.
| Imveliso | I-Carbon TetrafluorideCF4 | ||
| Ubungakanani bephakheji | Isilinda se-40Ltr | Isilinda se-50Ltr | |
| Ukuzalisa Ubunzima Obupheleleyo/Isilinda | Iikhilogram ezingama-30 | Iikhilogram ezingama-38 | |
| Ubungakanani obulayishwe kwisikhongozeli se-20' | IiCyls ezingama-250 | IiCyls ezingama-250 | |
| Ubunzima obupheleleyo | Iitoni ezi-7.5 | Iitoni eziyi-9.5 | |
| Ubunzima beSilinda | Iikhilogram ezingama-50 | Iikhilogram ezingama-55 | |
| Ivalvu | I-CGA 580 | ||
①Ubumsulwa obuphezulu, indawo yamva nje;
②Umenzi wesatifikethi se-ISO;
③Ukuhanjiswa okukhawulezayo;
④ Inkqubo yohlalutyo olukwi-intanethi lokulawula umgangatho kwinyathelo ngalinye;
⑤Imfuneko ephezulu kunye nenkqubo ecokisekileyo yokuphatha isilinda ngaphambi kokuzalisa;